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akaturk Akademik ölçüm

Makale detayı · 2012

The effect of silicon loss and fabrication tolerance on spectral properties of porous silicon Fabry Perot cavities in sensing applications

Dergi

Optics Express

ISSN 1094-4087

YÖKSİS OpenAlex Açık erişim · gold SJR Q1 JCR Q1 Atıf 27 Yüzdelik 87.9% FWCI 2.17
Yıl
2012
Tür
article

Veri kaynağı ayrımı

  • YÖKSİS YÖKSİS makale kaydı
  • YÖKSİS dergi adı OPTICS EXPRESS
  • Katalog eşleşmesi (ISSN) Optics Express
  • OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)

Özet

İngilizce (OpenAlex)

In this paper, we investigate the effect of non-uniformities (enlargement of current passage, non-equal surface current densities, etc.) in axial as well as transverse directions of a porous silicon Fabry-Perot (FP) cavity as well as loss nature of bulk silicon on spectral properties of this cavity, even that cavity is created with an anisotropic etching process. Without correct and comprehensive characterization of such cavities by incorporating these non-uniformities and inherent lossy nature of a cavity, detection and identification of biological and chemical molecules by that cavity may yield unpredictable and misleading results. From our simulations, we note the following two key points. First, effects of the refractive index and the thickness of microcavity region of a lossless or lossy FP cavity on resonance wavelength is more prevailing than those of first and last layers. Second, the effect of some small loss inside the FP cavity is not detectable by the measurement of resonance wavelength whereas the same influence is noticeable by the measurement of reflectivity. We carried out some measurements from two different regions on the fabricated cavities to validate our simulation results. From a practical point of view in correct detection and/or identification of lossy biological or chemical vapor by FP cavities, we conclude that not only the measurement of resonance wavelength as well as its shift but also the reflectivity value at the resonance wavelength or some specific wavelengths should be utilized.

Konular

  • Silicon Nanostructures and Photoluminescence
  • Nanowire Synthesis and Applications
  • Photonic and Optical Devices

Birincil konu Silicon Nanostructures and Photoluminescence

Yazarlar

  1. UĞUR CEM HASAR GAZİANTEP ÜNİVERSİTESİ
  2. İBRAHİM YÜCEL ÖZBEK ATATÜRK ÜNİVERSİTESİ
  3. EMİN ARGUN ORAL ATATÜRK ÜNİVERSİTESİ
  4. TEVHİT KARACALI ATATÜRK ÜNİVERSİTESİ
  5. HASAN EFEOĞLU ATATÜRK ÜNİVERSİTESİ