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Akademisyen

HASAN EFEOĞLU

PROFESÖR

ATATÜRK ÜNİVERSİTESİ MÜHENDİSLİK FAKÜLTESİ ELEKTRİK-ELEKTRONİK MÜHENDİSLİĞİ BÖLÜMÜ

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 107
  • Proje 0
  • Kitap 0
  • Bildiri 0
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 62 Q2 25 Q3 8 Q4 3
WoS (JCR) Q1 41 Q2 35 Q3 16 Q4 10
TR Index 1 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 6
Ort. yüzdelik 64.6%
Üst %1 payı 0.0%
Üst %10 payı 6.1%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 107 yayın

Scopus (SJR)
Q1 62 Q2 25 Q3 8 Q4 3
WoS (JCR)
Q1 41 Q2 35 Q3 16 Q4 10
TR Index
1 makale

Makale listesi

  1. 2025 Characterization of TaxO5-y thin films grown by HiPIMS reactive sputtering for temperature sensing applications JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B DOI 10.1116/5.0272732 YÖKSİS SJR Q3 JCR Q4 OpenAlex 14.8%
  2. 2025 Room temperature current conduction mechanisms in Ba0.5Sr0.5TiO3 and Ba0.5Sr0.5TiO3/TiO2 multilayer memristor structures Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-025-14536-1 YÖKSİS SJR Q2 JCR Q2 OpenAlex 47.1%
  3. 2025 Experimental current-voltage-temperature and thermal sensitivity behaviors of an ideal Schottky barrier diode over a wide temperature range JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B DOI 10.1116/6.0004273 YÖKSİS SJR Q3 JCR Q4 OpenAlex üst %10 OpenAlex 92.0%
  4. 2025 Influence of nitrogen concentration on the temperature sensing and resistor properties of TaN thin films at cryogenic temperatures Materials Science and Engineering: B DOI 10.1016/j.mseb.2025.118605 YÖKSİS SJR Q1 JCR Q2 OpenAlex 52.3%
  5. 2025 Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-025-14460-4 YÖKSİS SJR Q2 JCR Q2 OpenAlex 1.8%
  6. 2025 Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes Journal of Electronic Materials DOI 10.1007/s11664-024-11678-6 YÖKSİS SJR Q2 JCR Q2 OpenAlex 80.2%
  7. 2023 Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes American Vacuum Society DOI 10.1116/6.0002411 YÖKSİS SJR Q3 JCR Q3 OpenAlex 87.6%
  8. 2023 Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range JOURNAL OF ELECTRONIC MATERIALS DOI 10.1007/s11664-022-10062-6 YÖKSİS SJR Q2 JCR Q3 OpenAlex 87.6%
  9. 2023 An experimental study: Dependence of Schottky diode parameters on Schottky contact area size Elsevier BV DOI 10.1016/j.optmat.2023.114038 YÖKSİS SJR Q1 JCR Q1 OpenAlex 89.6%
  10. 2022 Current-voltage-measurement temperature characteristics depending on the barrier-forming contact metal thickness in Au/Cu/n-Si/Au–Sb/Ni rectifying contacts Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2022.106532 YÖKSİS SJR Q1 JCR Q2 OpenAlex 69.9%
  11. 2022 Formation of a Ti → TiO2-graded layer and its effect on the memristive properties of TiOx(/Ti/TiOx) structures J. Mater. Sci: Mater Electron DOI 10.1007/s10854-022-07864-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 57.6%
  12. 2022 Thermal sensitivity and current-voltage-temperature characteristics in Pt/epitaxy n-Si/n+Si structures as a function of Schottky contact area J. Vac. Sci. Technol. DOI 10.1116/6.0002030 YÖKSİS SJR Q2 JCR Q4 OpenAlex 80.8%
  13. 2022 A highly stable temperature sensor based on Au/Cu/n-Si Schottky barrier diodes dependent on the inner metal thickness J. Phys. D: Appl. Phys. DOI 10.1088/1361-6463/ac43de YÖKSİS SJR Q1 JCR Q2 OpenAlex 73.6%
  14. 2021 AN APPLICATION OF R-HiPIMS METHOD FOR TiO2- AND TiO2:Cu-BASED MEMRISTORS: CONTROLLING Cu DOPING USING DC PULSE METHOD Surface Review and Letters DOI 10.1142/S0218625X20500419 YÖKSİS SJR Q3 JCR Q4 OpenAlex 7.0%
  15. 2021 Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I\u2013V characteristics in Au/Ti/Al2O3/n-GaAs structures Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-021-06753-1 YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.6%
  16. 2021 Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures Journal of Molecular Structure DOI 10.1016/j.molstruc.2020.129057 YÖKSİS SJR Q2 JCR Q3 OpenAlex 86.4%
  17. 2021 Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range Silicon DOI 10.1007/s12633-021-01132-1 YÖKSİS SJR Q2 JCR Q3 OpenAlex 51.9%
  18. 2021 The temperature induced current transport characteristics in the orthoferrite YbFeO3−δ thin film/p-type Si structure Journal of Physics: Condensed Matter DOI 10.1088/1361-648X/abba69 YÖKSİS SJR Q2 JCR Q3 OpenAlex 81.6%
  19. 2021 Temperature dependence of interface-state density distributions in Cu/CuO/n-type Si structures Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.285 YÖKSİS SJR Q2 OpenAlex 3.5%
  20. 2021 Memristiv effect on W/Ti/p-Si structure: Aging phenomena and one of the origin of barrier inhomogeneity Materials Today: Proceedings DOI 10.1016/j.matpr.2021.03.286 YÖKSİS SJR Q2 OpenAlex 3.9%

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