Carrier transport mechanism and bipolar resistive switching behavior of a nano-scale thin film TiO 2 memristor

Yerel katalogda bu makaleye atıf yapan 8 yayın (OpenAlex referans eşleşmesi; tam dünya listesi değildir).

1. 2019 Addressing the sneak-path problem in crossbar RRAM devices using memristor-based one Schottky diode-one resistor arrayAtıf 126 · OpenAlex
2. 2019 Circuit implementation of nano-scale TiO2 memristor using only metal-oxide-semiconductor transistorsAtıf 40 · OpenAlex
3. 2020 Nano-scale single layer TiO2-based artificial synaptic deviceAtıf 35 · OpenAlex
4. 2021 A simplified method to determine carrier transport mechanisms of metal-oxide resistive random access memory (RRAM) devices (International Congress on Semiconductor Materials and Devices-Tam Metin Konferans Bildirisi Özel Sayısı)Atıf 13 · OpenAlex
5. 2022 Formation of a Ti → TiO2-graded layer and its effect on the memristive properties of TiOx(/Ti/TiOx) structuresAtıf 8 · OpenAlex
6. 2019 A Generic Circuit Model for Memristor Based One Diode-One Resistor DevicesAtıf 3 · OpenAlex
7. 2025 Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arraysAtıf 0 · OpenAlex
8. 2025 Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arraysAtıf 0 · OpenAlex