NALAN BARAZ ARIKAN

• 2018 1
• 2019 5
• 2020 18
• 2021 20
• 2022 3

1. The surface and electrical properties of the Al/Ba2P2O7/p-Si heterojunctions in wide range of temperature and frequency TR Ömer Sevgili ve diğ. · Surfaces and Interfaces · 2022
2. DOI 10.1002/er.7794 2022
3. DOI 10.1016/j.jmrt.2022.03.058 2022
4. The effect of PVP: BaTiO 3 interlayer on the conduction mechanism and electrical properties at MPS structures TR Ali Barkhordari ve diğ. · Physica Scripta · 2021
5. Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures TR Selçuk Demirezen ve diğ. · Journal of Materials Science: Materials in Electronics · 2021
6. Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures TR Yashar Azizian-Kalandaragh ve diğ. · Journal of Molecular Structure · 2021
7. On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltage TR Esra Erbilen Tanrıkulu ve diğ. · Physica B: Condensed Matter · 2021 · bu akademisyenin 2 makalesine atıf
8. Self-powered ZrO 2 nanofibers/n-Si photodetector with high on/off ratio for detecting very low optical signal TR Fatma Yıldırım ve diğ. · Journal of Physics D: Applied Physics · 2021
9. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer TR Adem Tataroğlu ve diğ. · Journal of Materials Science: Materials in Electronics · 2021
10. Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures TR Javid Farazin ve diğ. · Journal of Materials Science: Materials in Electronics · 2021
11. Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure TR Ali Barkhordari ve diğ. · Silicon · 2021 · bu akademisyenin 2 makalesine atıf
12. Influence of graphene doping rate in PVA organic thin film on the performance of Al/p-Si structure TR Seçkin Altındal Yerişkin ve diğ. · Journal of Materials Science: Materials in Electronics · 2021
13. A Au/CuNiCoS 4 /p-Si photodiode: electrical and morphological characterization TR Adem Koçyiğit ve diğ. · Beilstein Journal of Nanotechnology · 2021
14. The electrical and dielectric properties of the magnetite nanoparticles supported graphene-oxide/n-Si MOS type device that operates across a wide temperature range TR Ilknur Gumus ve diğ. · Sensors and Actuators A: Physical · 2021
15. Au/p-Si, Au/PVA/p-Si ve Au/PVA:Gr/p-Si Schottky Bariyer Diyotların Üretimi ve Temel Elektriksel Özelliklerinin İncelenmesi TR Gülçin ERSÖZ DEMİR · Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi · 2021
16. DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al2O3–4H-n-SiC (MIS) DEVICES TR GÜLÇİN ERSÖZ DEMİR ve diğ. · Surface Review and Letters · 2021 · bu akademisyenin 3 makalesine atıf
17. DOI 10.1007/s12633-021-01260-8 2021 · bu akademisyenin 2 makalesine atıf
18. DOI 10.1002/er.7178 2021
19. DOI 10.1016/j.matchemphys.2021.125051 2021 · bu akademisyenin 2 makalesine atıf
20. DOI 10.1016/j.ijleo.2021.167729 2021
21. DOI 10.1016/j.physb.2020.412617 2021
22. DOI 10.1016/j.ssc.2021.114193 2021
23. DOI 10.1080/17458080.2021.1973667 2021
24. The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs) TR Semsettin Altindal ve diğ. · Physica B: Condensed Matter · 2020
25. The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements TR Mohammad Hussein Al-Dharob ve diğ. · Journal of Physics and Chemistry of Solids · 2020
26. Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements TR Yashar Azizian-Kalandaragh ve diğ. · Applied Physics A · 2020
27. Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures TR Ahmet Muhammed Akbaş ve diğ. · Journal of Materials Science: Materials in Electronics · 2020
28. On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements TR Abbas Sabahi Namini ve diğ. · Applied Physics A · 2020
29. A SYSTEMATIC STUDY ON THE DIELECTRIC RELAXATION, ELECTRIC MODULUS AND ELECTRICAL CONDUCTIVITY OF Al/Cu:TiO2∕n-Si (MOS) STRUCTURES/CAPACITORS TR M. YILDIRIM ve diğ. · Surface Review and Letters · 2020
30. The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage TR M.O. Erdal ve diğ. · Microelectronics Reliability · 2020

En yeni 30 yayın gösteriliyor.