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Akademisyen

MERT YILDIRIM

PROFESÖR

DÜZCE ÜNİVERSİTESİ MÜHENDİSLİK FAKÜLTESİ MEKATRONİK MÜHENDİSLİĞİ BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 37
  • Proje 0
  • Kitap 0
  • Bildiri 13
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 10 Q2 15 Q3 6 Q4 1
WoS (JCR) Q1 8 Q2 12 Q3 9 Q4 4
TR Index 3 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 0
Ort. yüzdelik 53.7%
Üst %1 payı 0.0%
Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 37 yayın

Makale listesi

  1. 2022 The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes Elsevier BV DOI 10.1016/j.cap.2022.09.015 YÖKSİS SJR Q2 JCR Q3
  2. 2021 One-step preparation of poly (NIPAM-pyrrole) electroconductive composite hydrogel and its dielectric properties Journal of Applied Polymer Science DOI 10.1002/app.50527 YÖKSİS SJR Q2 JCR Q2
  3. 2020 Influence of UV light intensity on dielectric behaviours of pure and dye-doped cholesteric liquid crystals Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-04740-6 YÖKSİS SJR Q2 JCR Q3
  4. 2020 The origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-GaAs contacts at low temperatures (T≤300 K) JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS DOI https://joam.inoe.ro/articles/the-origin-of-anomalous-peak-and-negative-capacitance-in-the-forward-bias-c-v-characteristics-of-aun-gaas-contacts-at-low-temperatures-t300-k/ YÖKSİS SJR Q3 JCR Q4
  5. 2020 Effect of intermolecular charge transfer between Ni(II)Pc and CdSeS/ZnS QD on dielectric relaxation mechanism of 5CB nematic liquid crystals in the presence of UV illumination Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-019-02797-6 YÖKSİS SJR Q2 JCR Q3
  6. 2020 A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics Applied Physics A DOI 10.1007/s00339-020-03817-7 YÖKSİS SJR Q2 JCR Q2
  7. 2020 Distribution of interface traps in Au/2 GC-doped Ca3Co4Ga0.001Ox/n-Si structures JOURNAL OF APPLIED POLYMER SCIENCE DOI https://onlinelibrary.wiley.com/doi/abs/10.1002/app.48399 YÖKSİS SJR Q1 JCR Q2
  8. 2020 Effects of CdTe Quantum Dot Dispersal on Current-Voltage Characteristics in Liquid Crystalline Mediums of E63, E7 and SCLP Düzce Üniversitesi Bilim ve Teknoloji Dergisi DOI 10.29130/dubited.691888 YÖKSİS TR Index
  9. 2019 On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-019-01233-z YÖKSİS SJR Q2 JCR Q2
  10. 2018 Dielectric and Performance Analysis of CdTe Quantum Dots Doped Nematic Liquid Crystal Düzce Üniversitesi Bilim ve Teknoloji Dergisi DOI 10.29130/dubited.360125 YÖKSİS TR Index
  11. 2017 Current conduction in Schottky barrier diodes with poly(propylene glycol)-b-polystyrene block copolymer interfacial layer Indian Journal of Pure Applied Physics DOI http://14.139.47.23/index.php/IJPAP/article/view/12512 YÖKSİS SJR Q4 JCR Q4
  12. 2017 Synthesis chemical and dielectric characterization of poly (linoleic acid)- g -poly (dimethylaminoethyl methacrylate): A novel high-κ graft copolymer Composites Part B: Engineering DOI 10.1016/j.compositesb.2017.02.031 YÖKSİS SJR Q1 JCR Q1
  13. 2017 Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors Politeknik Dergisi DOI 10.2339/politeknik.369147 YÖKSİS JCR Q4
  14. 2017 Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature Journal of Electronic Materials DOI 10.1007/s11664-016-5255-1 YÖKSİS SJR Q2 JCR Q3
  15. 2017 Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2017.06.037 YÖKSİS SJR Q1 JCR Q1
  16. 2017 Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2017.09.030 YÖKSİS SJR Q1 JCR Q1
  17. 2016 Effect of iron phthalocyanine FePc concentration on electrical and dielectric properties of the nematic liquid crystal composites Journal of Molecular Liquids DOI 10.1016/j.molliq.2016.09.001 YÖKSİS SJR Q1 JCR Q1
  18. 2016 Current conduction and steady state photoconductivity in photodiodes with bismuth titanate interlayer Thin Solid Films DOI 10.1016/j.tsf.2016.07.040 YÖKSİS SJR Q1 JCR Q2
  19. 2016 The Effect of Interlayer Thickness on Frequency Dependent Electrical Characteristics of Al p Si Schottky Barrier Diodes with Bi4Ti3O12 Interlayer Karaelmas Fen ve Mühendislik Dergisi DOI http://fbd.beun.edu.tr/index.php/zkufbd/article/view/434 YÖKSİS TR Index
  20. 2015 The effects of Bi4Ti3O12 interfacial ferroelectric layer on the dielectric properties of Au n Si structures International Journal of Modern Physics B DOI 10.1142/S0217979215501209 YÖKSİS SJR Q3 JCR Q3

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