Akademisyen

ŞEREF KALEM

PROFESÖR

İSTANBUL ATLAS ÜNİVERSİTESİ MÜHENDİSLİK VE DOĞA BİLİMLERİ FAKÜLTESİ ELEKTRİK-ELEKTRONİK MÜHENDİSLİĞİ BÖLÜMÜ

Ana Dal Mühendislik Temel Alanı
Yan Dal Elektrik-Elektronik ve Haberleşme Mühendisliği

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

Makale 39
Proje 0
Kitap 0
Bildiri 5
Patent 0
Sanatsal 0

Scopus (SJR) Q1 25 Q2 5 Q3 1 Q4 2

WoS (JCR) Q1 22 Q2 7 Q3 5 Q4 0

TR Index 1 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 1

Üst %10 makale 4

Ort. yüzdelik 61.8%

Üst %1 payı 2.6%

Üst %10 payı 10.5%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Makale listesi

2023 Time-resolved radiative recombination in black silicon Springer Science and Business Media LLC DOI 10.1007/s10854-023-10127-0 YÖKSİS SJR Q2 JCR Q2 OpenAlex 41.6%
2021 Structural properties of Ge-Sb-Te alloys Solid-State Electronics DOI 10.1016/j.sse.2021.108101 YÖKSİS OpenAlex 39.9%
2021 Si nanopillar arrays as possible electronic device platforms Solid State Electronics DOI 10.1016/j.sse.2021.108102 YÖKSİS OpenAlex 38.3%
2020 1320 nm Light Source From Deuterium Treated Silicon IEEE Open Journal of Nanotechnology DOI 10.1109/OJNANO.2020.3025167 YÖKSİS SJR Q2 JCR Q3 OpenAlex 7.5%
2011 Black silicon with high density and high aspect ratio nanowhiskers Nanotechnology DOI 10.1088/0957-4484/22/23/235307 YÖKSİS SJR Q1 JCR Q1 OpenAlex 84.2%
2010 Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures Thin Solid Films DOI 10.1016/j.tsf.2009.08.021 YÖKSİS SJR Q1 JCR Q1 OpenAlex 86.5%
2010 Formation of germanates on germanium by chemical vapor treatment Thin Solid Films DOI 10.1016/j.tsf.2009.09.137 YÖKSİS SJR Q1 JCR Q1 OpenAlex 62.9%
2009 Transformation of germanium to fluogermanates Applied Physics A DOI 10.1007/s00339-009-5411-z YÖKSİS SJR Q1 JCR Q2 OpenAlex 64.2%
2009 Controlled thinning and surface smoothening of silicon nanopillars Nanotechnology DOI 10.1088/0957-4484/20/44/445303 YÖKSİS SJR Q1 JCR Q1 OpenAlex 81.2%
2006 Optical characterization of dislocation free Ge and GeOI wafers Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2006.08.035 YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.7%
2004 Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching Applied Surface Science DOI 10.1016/j.apsusc.2004.05.008 YÖKSİS SJR Q1 JCR Q2 OpenAlex 58.4%
2000 Possibility of fabricating light-emitting porous silicon from gas phase etchants Optics Express DOI 10.1364/OE.6.000007 YÖKSİS SJR Q1 JCR Q1 OpenAlex 15.4%
1995 Optical and structural investigation of stain\u2010etched silicon Applied Physics Letters DOI 10.1063/1.114429 YÖKSİS SJR Q1 JCR Q1 OpenAlex 73.2%
1991 Hydrogenation of InAs on GaAs heterostructures Journal of Applied Physics DOI 10.1063/1.349558 YÖKSİS SJR Q1 JCR Q1 OpenAlex 71.1%
1990 Transport properties of InAs epilayers grown by molecular beam epitaxy Semiconductor Science and Technology DOI 10.1088/0268-1242/5/3S/044 YÖKSİS SJR Q1 JCR Q1 OpenAlex 63.6%
1989 Molecular\u2010beam epitaxial growth and transport properties of InAs epilayers Journal of Applied Physics DOI 10.1063/1.344141 YÖKSİS SJR Q1 JCR Q1 OpenAlex 82.6%
1989 Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates Journal of Applied Physics DOI 10.1063/1.343339 YÖKSİS SJR Q1 JCR Q1 OpenAlex 79.6%
1989 Enhanced electron spin polarization in photoemission from thin GaAs Applied Physics Letters DOI 10.1063/1.102236 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %10 OpenAlex 91.5%
1988 Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy Applied Physics Letters DOI 10.1063/1.100031 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %1 OpenAlex 99.5%
1988 Optical investigation ofa-Si:H/a-SiNx:H superlattices Physical Review B DOI 10.1103/PhysRevB.37.8837 YÖKSİS JCR Q1 OpenAlex 75.8%

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