Akademisyen

EKMEL ÖZBAY

PROFESÖR

İHSAN DOĞRAMACI BİLKENT ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

Ana Dal Mühendislik Temel Alanı
Yan Dal Elektrik-Elektronik Mühendisliği

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

Makale 41
Proje 0
Kitap 0
Bildiri 51
Patent 0
Sanatsal 0

Scopus (SJR) Q1 6 Q2 10 Q3 14 Q4 3

WoS (JCR) Q1 3 Q2 8 Q3 7 Q4 12

TR Index 3 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0

Üst %10 makale 1

Ort. yüzdelik 54.2%

Üst %1 payı 0.0%

Üst %10 payı 3.2%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Makale listesi

2019 Lattice Parameters a-, c-, Strain-Stress Analysis and Thermal Expansion Coefficient of InGaN/GaN Solar Cell Structures Grown by MOCVD Politeknik Dergisi DOI 10.2339/politeknik.403978 YÖKSİS JCR Q4 OpenAlex 5.3%
2018 Angstrom Thick ZnO PassivationLayer to Improve thePhotoelectrochemical WaterSplitting Performance of a TiO2Nanowire Photoanode: The Role ofDeposition Temperature Scientific Reports YÖKSİS SJR Q1 JCR Q1
2018 Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs Semiconductor Science and Technology DOI 10.1088/1361-6641/aaebab YÖKSİS SJR Q1 JCR Q2 OpenAlex 69.7%
2018 Electronic band structure of rare-earth ferroelastics: theoretical investigations JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS YÖKSİS SJR Q3 JCR Q4
2018 Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications Journal of Nanoelectronics and Optoelectronics DOI 10.1166/jno.2018.2239 YÖKSİS SJR Q3 JCR Q4 OpenAlex 59.9%
2018 Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications Journal of Nanoelectronics and Optoelectronics YÖKSİS SJR Q3 JCR Q4
2018 Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-018-9351-2 YÖKSİS SJR Q2 JCR Q2 OpenAlex 64.0%
2018 Ab initio Modeling of Elastic and Optical Properties of Sb andBi Sesquioxides Journal of Physics: Conf. Series DOI 10.1088/1742-6596/1045/1/012021 YÖKSİS OpenAlex 83.1%
2018 Wave Propagations in Metamaterial Based 2D Phononic Crystal: Finite Element Analysis Journal of Physics: Conference Series DOI 10.1088/1742-6596/1045/1/012034 YÖKSİS SJR Q4 OpenAlex 71.6%
2018 Stress Distribution of a New Type of Perforated Implants in Femur Neck Fracture: Finite Element Model Journal of Physics: Conference Series DOI 10.1088/1742-6596/1045/1/012017 YÖKSİS SJR Q4 OpenAlex 85.4%
2018 Strategies for Plasmonic Hot-Electron Driven Photoelectrochemical Water Splitting ChemPhotoChem DOI 10.1002/cptc.201700165 YÖKSİS SJR Q1 JCR Q3 OpenAlex 85.9%
2018 Electronic band structure of rare-earth ferroelastics: theoretical investigations JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS YÖKSİS SJR Q3 JCR Q4
2018 Electronic and optical properties of black phosphorus doped with Au, Sn and I atoms PHILOSOPHICAL MAGAZINE DOI 10.1080/14786435.2017.1396375 YÖKSİS SJR Q2 JCR Q2 OpenAlex 69.3%
2018 Electronic properties of graphene nanoribbons doped with zinc, cadmium, mercury atoms PHYSICA E-LOW-DIMENSIONAL SYSTEMS NANOSTRUCTURES DOI 10.1016/j.physe.2018.07.017 YÖKSİS SJR Q2 JCR Q2 OpenAlex 46.9%
2018 Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures IEEE TRANSACTIONS ON ELECTRON DEVICES DOI 10.1109/TED.2018.2796501 YÖKSİS SJR Q1 JCR Q2 OpenAlex 74.5%
2018 InGaN/GaN Yapıların Mozaik Yapı Analizi Avrupa Bilim Ve teknoloji Dergisi YÖKSİS TR Index
2017 AVBVICVII ferroelectrics as novel materials for phononic crystals Ferroelectrics DOI 10.1080/00150193.2017.1332966 YÖKSİS SJR Q3 JCR Q4 OpenAlex 8.1%
2017 Spectral scalability and optical spectra of fractal multilayer structures: FDTD analysis Applied Physics A DOI 10.1007/s00339-016-0628-0 YÖKSİS SJR Q2 JCR Q3 OpenAlex 60.6%
2017 Transport properties of epitaxial graphene grown on SiC substrate Optoelectronics and Advanced Materials-Rapid Communications YÖKSİS SJR Q3 JCR Q4
2017 Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-016-5909-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 73.1%

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