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Akademisyen

BURCU ARPAPAY

DOKTOR ÖĞRETİM ÜYESİ

ESKİŞEHİR TEKNİK ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 20
  • Proje 0
  • Kitap 0
  • Bildiri 24
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 6 Q2 11 Q3 2 Q4 0
WoS (JCR) Q1 4 Q2 6 Q3 8 Q4 2
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 0
Ort. yüzdelik 40.9%
Üst %1 payı 0.0%
Üst %10 payı 0.0%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 20 yayın

Scopus (SJR)
Q1 6 Q2 11 Q3 2 Q4 0
WoS (JCR)
Q1 4 Q2 6 Q3 8 Q4 2
TR Index
0 makale

Makale listesi

  1. 2025 Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure Applied Physics A DOI 10.1007/s00339-024-08213-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 58.6%
  2. 2025 Highly ordered polystyrene nanospheres by self-assembly method Journal of Micro/Nanopatterning, Materials, and Metrology DOI 10.1117/1.JMM.24.1.013001 YÖKSİS SJR Q2 JCR Q3 OpenAlex 1.5%
  3. 2025 Random alloy growth of AlAs0.08Sb0.92 on GaSb under high Group-V flux condition Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2024.109012 YÖKSİS JCR Q1 OpenAlex 39.0%
  4. 2025 Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy Journal of Crystal Growth DOI 10.1016/j.jcrysgro.2025.128330 YÖKSİS SJR Q2 JCR Q2 OpenAlex 11.4%
  5. 2024 Light Logic Gates with GaAs‐Based Structures physica status solidi (RRL) – Rapid Research Letters DOI 10.1002/pssr.202400173 YÖKSİS SJR Q2 JCR Q3 OpenAlex 4.8%
  6. 2024 Effect of tilt angle and drying temperature on the surface coverage rate of polystyrene nanospheres in evaporation-driven self-assembly process Journal of Micro/Nanopatterning, Materials, and Metrology DOI 10.1117/1.JMM.23.1.013001 YÖKSİS SJR Q2 JCR Q3 OpenAlex 44.6%
  7. 2024 Light Logic Gates with GaAs‐Based Structures physica status solidi (RRL) – Rapid Research Letters DOI 10.1002/pssr.202470023 YÖKSİS SJR Q2 JCR Q3 OpenAlex 7.3%
  8. 2022 The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number Physica B: Condensed Matter DOI 10.1016/j.physb.2022.413703 YÖKSİS SJR Q2 JCR Q3 OpenAlex 62.4%
  9. 2020 Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2020.104990 YÖKSİS SJR Q1 JCR Q1 OpenAlex 44.0%
  10. 2020 The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates Superlattices and Microstructures DOI 10.1016/j.spmi.2020.106450 YÖKSİS SJR Q2 JCR Q3 OpenAlex 59.5%
  11. 2020 Convex-like GaAs nanowires grown on Si (111) substrates Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2019.104817 YÖKSİS SJR Q1 JCR Q1 OpenAlex 41.0%
  12. 2020 A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy Semiconductor Science and Technology DOI 10.1088/1361-6641/abce1b YÖKSİS SJR Q1 JCR Q3 OpenAlex 65.7%
  13. 2019 Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy Semiconductor Science and Technology DOI 10.1088/1361-6641/aafcbe YÖKSİS SJR Q1 JCR Q2 OpenAlex 69.6%
  14. 2016 A comparative photoluminescence study on Mn Free GaAs AlAs and Mn containing GaMnAs AlAs quantum wells QWs grown on various orientations by MBE Philosophical Magazine DOI 10.1080/14786435.2015.1122244 YÖKSİS SJR Q2 JCR Q2 OpenAlex 46.1%
  15. 2014 Structural and Optical Properties of Electrochemically Grown Fluorine Doped Zinc Oxide Rods Journal of Nanoelectronics and Optoelectronics DOI 10.1166/jno.2014.1639 YÖKSİS SJR Q3 JCR Q4 OpenAlex 50.1%
  16. 2014 Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure Thin Solid Films DOI 10.1016/j.tsf.2014.05.034 YÖKSİS SJR Q1 JCR Q2 OpenAlex 53.2%
  17. 2025 Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure Applied Physics A DOI 10.1007/s00339-024-08213-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 58.6%
  18. 2024 Light Logic Gates with GaAs-Based Structures Physics Status Solidi RRL DOI 10.1002/pssr.202400173 YÖKSİS SJR Q2 JCR Q3 OpenAlex 4.8%
  19. 2015 A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE Philosophical Magazine DOI 10.1080/14786435.2015.1122244 YÖKSİS SJR Q1 JCR Q1 OpenAlex 46.1%
  20. 2014 Structural and Optical Properties of Electrochemically Grown Fluorine Doped Zinc Oxide Rods Journal of Nanoelectronics and Optoelectronics DOI 10.1166/jno.2014.1639 YÖKSİS SJR Q3 JCR Q4 OpenAlex 50.1%

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