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Akademisyen

BÜLENT ASLAN

DOÇENT

ESKİŞEHİR TEKNİK ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 40
  • Proje 0
  • Kitap 4
  • Bildiri 0
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 33 Q2 7 Q3 0 Q4 0
WoS (JCR) Q1 21 Q2 16 Q3 3 Q4 0
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 1
Üst %10 makale 3
Ort. yüzdelik 66.1%
Üst %1 payı 2.6%
Üst %10 payı 7.7%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 40 yayın

Scopus (SJR)
Q1 33 Q2 7 Q3 0 Q4 0
WoS (JCR)
Q1 21 Q2 16 Q3 3 Q4 0
TR Index
0 makale

Makale listesi

  1. 2026 Phase-controlled non-Markovian hysteresis in a nonlinear, non-Hermitian silicon microresonator Physical Review Applied DOI 10.1103/fcsp-jw79 YÖKSİS SJR Q1 JCR Q2 OpenAlex 90.0%
  2. 2026 Coherent control of (non-)Hermitian mode coupling: tunable chirality and exceptional point dynamics in photonic microresonators Light: Science & Applications DOI 10.1038/s41377-025-02176-3 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %1 OpenAlex 99.3%
  3. 2025 Optimized photon routing with a silicon 3 × 3 waveguide coupler device Optics Express DOI 10.1364/OE.551702 YÖKSİS SJR Q1 JCR Q2 OpenAlex 56.9%
  4. 2024 On the spectral response of a taiji-CROW device Optics Express DOI 10.1364/OE.514629 YÖKSİS SJR Q1 JCR Q2 OpenAlex 73.7%
  5. 2018 Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array Semiconductor Science and Technology DOI 10.1088/1361-6641/aaa7a0 YÖKSİS SJR Q1 JCR Q2 OpenAlex 70.5%
  6. 2017 Influence of the growth conditions on the optical and structural properties of self assembled InAs GaAs quantum dots for low As In ratio Applied Surface Science DOI 10.1016/j.apsusc.2016.08.162 YÖKSİS SJR Q1 JCR Q1 OpenAlex 63.2%
  7. 2017 Second harmonic generation in asymmetric MgSe/CdSe/ZnCdMgSe quantum well structures physica status solidi (b) DOI 10.1002/pssb.201700031 YÖKSİS SJR Q2 JCR Q3 OpenAlex 61.3%
  8. 2016 Influence of the lattice mismatch on the lattice vibration modes for InAs GaSb superlattices Applied Surface Science DOI 10.1016/j.apsusc.2015.11.244 YÖKSİS SJR Q1 JCR Q1 OpenAlex 67.0%
  9. 2015 Comparative evaluation of InAs GaSb superlattices for mid infrared detection p i n versus residual doping Semiconductor Science and Technology DOI 10.1088/0268-1242/30/8/085006 YÖKSİS SJR Q1 JCR Q2 OpenAlex 73.3%
  10. 2015 Structural and optical characterization of InAs GaSb type II superlattices Influence of the change in InAs and GaSb layer thicknesses for fixed InSb like interfaces Thin Solid Films DOI 10.1016/j.tsf.2015.07.020 YÖKSİS SJR Q1 JCR Q2 OpenAlex 64.2%
  11. 2014 Intersubband transitions in InxGa1 xN InyGa1 yN GaN staggered quantum wells Journal of Applied Physics DOI 10.1063/1.4872251 YÖKSİS SJR Q1 JCR Q2 OpenAlex 63.1%
  12. 2013 On the donor states in double InxGa1 xN InyGa1 yN GaN staggered quantum wells Semiconductor Science and Technology DOI 10.1088/0268-1242/28/11/115006 YÖKSİS SJR Q1 JCR Q1 OpenAlex 71.7%
  13. 2013 On the structural characterization of InAs GaSb type II superlattices The effect of interfaces for fixed layer thicknesses Thin Solid Films DOI 10.1016/j.tsf.2013.08.089 YÖKSİS SJR Q1 JCR Q2 OpenAlex 82.0%
  14. 2012 Effect of the Passivation Layer on the Noise Characteristics of Mid Wave Infrared InAs GaSb Superlattice Photodiodes IEEE Photonics Technology Letters DOI 10.1109/LPT.2012.2188504 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %10 OpenAlex 91.4%
  15. 2012 Effects of magnetic field on the terahertz nonlinear optical properties in donor doped GaAs AlGaAs quantum wells physica status solidi (b) DOI 10.1002/pssb.201248065 YÖKSİS SJR Q1 JCR Q3 OpenAlex 64.8%
  16. 2012 Binding energies and oscillator strengths of impurity states in wurtzite InGaN GaN staggered quantum wells Journal of Applied Physics DOI 10.1063/1.4751438 YÖKSİS SJR Q1 JCR Q1 OpenAlex 80.8%
  17. 2011 Donor related third order optical nonlinearites in GaAs AlGaAs quantum wells at the THz region Semiconductor Science and Technology DOI 10.1088/0268-1242/26/8/085017 YÖKSİS SJR Q1 JCR Q1 OpenAlex 65.9%
  18. 2011 Donor related third order optical nonlinearities in GaAs AlGaAs quantum wells at the THz region Semiconductor Science and Technology DOI 10.1088/0268-1242/26/11/119501 YÖKSİS SJR Q1 JCR Q1 OpenAlex 41.7%
  19. 2008 Quantum dots for terahertz generation Journal of Physics: Condensed Matter DOI 10.1088/0953-8984/20/38/384211 YÖKSİS SJR Q1 JCR Q2 OpenAlex 61.6%
  20. 2008 On the spectral response of quantum dot infrared photodetectors Postgrowth annealing and polarization behaviors Applied Physics Letters DOI 10.1063/1.2953083 YÖKSİS SJR Q1 JCR Q1 OpenAlex 54.3%

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