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Akademisyen

HALİT ALTUNTAŞ

PROFESÖR

ÇANKIRI KARATEKİN ÜNİVERSİTESİ FEN FAKÜLTESİ FİZİK BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 33
  • Proje 0
  • Kitap 0
  • Bildiri 46
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 8 Q2 16 Q3 3 Q4 0
WoS (JCR) Q1 5 Q2 9 Q3 10 Q4 3
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 1
Ort. yüzdelik 66.5%
Üst %1 payı 0.0%
Üst %10 payı 3.7%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 33 yayın

Scopus (SJR)
Q1 8 Q2 16 Q3 3 Q4 0
WoS (JCR)
Q1 5 Q2 9 Q3 10 Q4 3
TR Index
0 makale

Makale listesi

  1. 2025 Effect of Zinc Precursors on the Antibacterial and Photocatalytic Applications of Green Synthesized ZnO Nanostructures Using Calluna vulgaris Microscopy Research and Technique DOI 10.1002/jemt.70031 YÖKSİS SJR Q2 JCR Q2 OpenAlex 44.6%
  2. 2025 Characterization, Antibacterial Activity, and Dye Removal Capacity of Green and Hydrothermal Green Synthesized ZnO Nanostructures Using Crataegus Orientalis Crystal Research and Technology DOI 10.1002/crat.202400108 YÖKSİS SJR Q2 JCR Q3 OpenAlex 74.6%
  3. 2024 The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Journal of Electronic Materials DOI 10.1007/s11664-023-10912-x YÖKSİS SJR Q2 JCR Q2 OpenAlex 69.2%
  4. 2018 Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING DOI 10.1016/j.mssp.2018.06.027 YÖKSİS SJR Q2 JCR Q2 OpenAlex 71.8%
  5. 2017 A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition Electronic Materials Letters DOI 10.1007/s13391-017-6111-z YÖKSİS SJR Q2 JCR Q2 OpenAlex 72.6%
  6. 2016 Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow cathode plasma assisted atomic layer deposition Semiconductor Science and Technology DOI 10.1088/0268-1242/31/7/075003 YÖKSİS SJR Q1 JCR Q2 OpenAlex 80.6%
  7. 2015 Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma Enhanced Atomic Layer Deposition IEEE Transactions on Electron Devices DOI 10.1109/TED.2015.2476597 YÖKSİS SJR Q1 JCR Q1 OpenAlex 73.6%
  8. 2015 Current transport mechanisms in plasma enhanced atomic layer deposited AlN thin films Journal of Applied Physics DOI 10.1063/1.4917567 YÖKSİS SJR Q2 JCR Q2 OpenAlex üst %10 OpenAlex 91.8%
  9. 2014 Electrical characteristics of Ga2O3 thin films grown by PEALD Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2014.01.029 YÖKSİS SJR Q1 JCR Q1 OpenAlex 76.3%
  10. 2014 Effect of postdeposition annealing on the electrical properties of Ga2O3 thin films grown on p Si by plasma enhanced atomic layer deposition Journal of Vacuum Science Technology A: Vacuum, Surfaces, and Films DOI 10.1116/1.4875935 YÖKSİS SJR Q1 JCR Q1 OpenAlex 68.7%
  11. 2013 The analysis of leakage current in MIS Au SiO2 n GaAs at room temperature Semiconductors DOI 10.1134/S1063782613100023 YÖKSİS SJR Q3 JCR Q4 OpenAlex 71.2%
  12. 2013 The interface states and series resistance analyzing of Au SiO2 n GaAs at high temperatures Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2013.04.098 YÖKSİS SJR Q1 JCR Q1 OpenAlex 6.8%
  13. 2012 Frequency and voltage dependence of negative capacitance in Au SiO2 n GaAs structures Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2011.08.001 YÖKSİS SJR Q2 JCR Q2 OpenAlex 85.2%
  14. 2011 Strain Stress Analysis of AlGaN GaN Heterostructures With and Without an AlN Buffer and Interlayer Strain DOI 10.1111/j.1475-1305.2009.00730.x YÖKSİS SJR Q2 JCR Q1 OpenAlex 60.6%
  15. 2011 Electrical characteristics of Au n GaAs structures with thin and thick SiO2 dielectric layer Semiconductors DOI 10.1134/S1063782611100034 YÖKSİS SJR Q3 JCR Q4 OpenAlex 61.9%
  16. 2010 Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode Surface and Interface Analysis DOI 10.1002/sia.3331 YÖKSİS SJR Q2 JCR Q3 OpenAlex 68.1%
  17. 2010 Influence of thermal annealing on the structure and optical properties of d.c. magnetron sputtered titanium dioxide thin films Surface and Interface Analysis DOI 10.1002/sia.3373 YÖKSİS SJR Q2 JCR Q3 OpenAlex 14.2%
  18. 2009 Electrical characteristics of Au n GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature Vacuum DOI 10.1016/j.vacuum.2009.01.002 YÖKSİS SJR Q2 JCR Q3 OpenAlex 85.7%
  19. 2009 Electrical characterization of current conduction in Au TiO2 n Si at wide temperature range Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2009.12.001 YÖKSİS SJR Q2 JCR Q4 OpenAlex 78.7%
  20. 2009 A detailed study of current voltage characteristics in Au SiO2 n GaAs in wide temperature range Microelectronics Reliability DOI 10.1016/j.microrel.2009.06.003 YÖKSİS SJR Q1 JCR Q2 OpenAlex 87.4%

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