Akademisyen

NEZİR YILDIRIM

PROFESÖR

BİNGÖL ÜNİVERSİTESİ FEN-EDEBİYAT FAKÜLTESİ FİZİK BÖLÜMÜ

Ana Dal Fen Bilimleri ve Matematik Temel Alanı
Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

Makale 52
Proje 0
Kitap 0
Bildiri 6
Patent 0
Sanatsal 0

Scopus (SJR) Q1 20 Q2 15 Q3 6 Q4 3

WoS (JCR) Q1 7 Q2 16 Q3 12 Q4 9

TR Index 3 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0

Üst %10 makale 8

Ort. yüzdelik 70.9%

Üst %1 payı 0.0%

Üst %10 payı 16.3%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Makale listesi

2021 Effects of measurement temperature and metal thickness on Schottky diode characteristics Physica B: Condensed Matter DOI 10.1016/J.PHYSB.2021.413125 YÖKSİS SJR Q2 JCR Q3 OpenAlex 82.4%
2020 Characterization of aluminum 8-hydroxyquinoline microbelts and microdots, and photodiode applications Journal of Physics and Chemistry of Solids DOI 10.1016/j.jpcs.2019.109128 YÖKSİS SJR Q2 JCR Q2 OpenAlex 75.6%
2020 Temperature dependence of interface state density distribution determined from conductance\u2013frequency measurements in Ni/n-GaP/Al diode Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-04638-3 YÖKSİS SJR Q2 JCR Q3 OpenAlex 72.0%
2018 Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction Physica B: Condensed Matter DOI 10.1016/j.physb.2018.08.029 YÖKSİS SJR Q2 JCR Q3 OpenAlex üst %10 OpenAlex 92.3%
2018 Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation Materials Science-Poland DOI 10.2478/msp-2018-0092 YÖKSİS SJR Q3 JCR Q4 OpenAlex 68.3%
2018 CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS Surface Review and Letters DOI 10.1142/S0218625X18500828 YÖKSİS SJR Q4 JCR Q4 OpenAlex 68.7%
2017 Photovoltaic and Electrical Properties of Al/ Ruthenium (II)-complex / p-Si Photodiode Cumhuriyet Science Journal DOI 10.17776/cumuscij.297189 YÖKSİS TR Index OpenAlex 8.4%
2017 The Effects of Thermal Annealing and Sample Temperature on Current-Voltage Characteristics of Au/n-Si/Al Schottky Diodes Cumhuriyet Science Journal DOI 10.17776/cumuscij.298666 YÖKSİS TR Index OpenAlex 0.1%
2016 Characteristic diode parameters in thermally annealed Ni/p-InP contacts Journal of Semiconductors DOI 10.1088/1674-4926/37/4/044001 YÖKSİS SJR Q3 JCR Q2 OpenAlex 66.7%
2016 Electronic Transport of an Ni n GaAs Diode Analysed Over a Wide Temperature Range Journal of Electronic Materials DOI 10.1007/s11664-016-4342-7 YÖKSİS SJR Q2 JCR Q3 OpenAlex 76.2%
2015 Capacitance conductance frequency characteristics of Au Ni n GaN undoped GaN Structures Physica B: Condensed Matter DOI 10.1016/j.physb.2014.09.033 YÖKSİS SJR Q2 JCR Q3 OpenAlex 78.2%
2015 The interface state density characterization by temperature dependent capacitance conductance frequency measurements in Au Ni i n i GaN structures title Materials Research Express DOI 10.1088/2053-1591/2/9/096304 YÖKSİS SJR Q2 JCR Q3 OpenAlex 67.1%
2013 Electrical properties and interface state energy distributions of Cr n Si Schottky barrier diode Superlattices and Microstructures DOI 10.1016/j.spmi.2013.10.015 YÖKSİS SJR Q1 JCR Q2 OpenAlex 83.6%
2012 Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts The European Physical Journal Applied Physics DOI 10.1051/epjap/2011110221 YÖKSİS SJR Q2 JCR Q4 OpenAlex 8.8%
2011 Temperature dependent current voltage and capacitance voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n type Si Journal of Alloys and Compounds DOI 10.1016/j.jallcom.2011.03.082 YÖKSİS SJR Q1 JCR Q1 OpenAlex 83.6%
2011 Effects of temperature on series resistance determination of electrodeposited Cr n Si Au Sb Schottky structures Microelectronic Engineering DOI 10.1016/j.mee.2011.04.060 YÖKSİS SJR Q1 JCR Q2 OpenAlex 57.5%
2010 On temperature-dependent experimental I-V and C-V data of Ni/n-GaN Schottky contacts JOURNAL OF APPLIED PHYSICS DOI 10.1063/1.3517810 YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 93.4%
2010 Influence of interface states on the temperature dependence and current voltage characteristics of Ni p InP Schottky diodes Superlattices and Microstructures DOI 10.1016/j.spmi.2009.11.008 YÖKSİS SJR Q1 JCR Q3 OpenAlex 84.6%
2010 Barrier height temperature coefficient in ideal Ti n GaAs Schottky contacts Microelectronic Engineering DOI 10.1016/j.mee.2009.10.012 YÖKSİS SJR Q1 JCR Q2 OpenAlex 76.8%
2010 The theoretical and experimental study on double Gaussian distribution in inhomogeneous barrier height Schottky contacts Microelectronic Engineering DOI 10.1016/j.mee.2010.02.007 YÖKSİS SJR Q1 JCR Q2 OpenAlex 79.2%

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