Akademisyen

MUHSİNE BİLGE İMER

DOKTOR ÖĞRETİM ÜYESİ (Unvan:Doçent)

ORTA DOĞU TEKNİK ÜNİVERSİTESİ MÜHENDİSLİK FAKÜLTESİ METALURJİ VE MALZEME MÜHENDİSLİĞİ BÖLÜMÜ

Ana Dal Mühendislik Temel Alanı
Yan Dal Malzeme ve Metalurji Mühendisliği

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

Makale 18
Proje 0
Kitap 0
Bildiri 23
Patent 0
Sanatsal 0

Scopus (SJR) Q1 13 Q2 3 Q3 0 Q4 0

WoS (JCR) Q1 6 Q2 9 Q3 1 Q4 1

TR Index 1 makale

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Makale listesi

2023 Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications Journal of Polytechnic DOI 10.2339/politeknik.873160 YÖKSİS JCR Q4
2023 Dynamics in between Structural and Electrical Properties of as Grown ZnO Thin Films by Thermal ALD Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji DOI 10.29109/gujsc.1348409 YÖKSİS TR Index
2021 A Comparative Analysis of Ternary Element Addition on Corrosion Behavior of Aluminide Coatings in Harsh Environmental Conditions Corrosion DOI 10.5006/3855 YÖKSİS SJR Q2 JCR Q2
2021 Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications IEEE Transactions on Electron Devices DOI 10.1109/TED.2021.3050740 YÖKSİS SJR Q2 JCR Q2
2019 Core/Shell Copper Nanowire Networks for Transparent Thin Film Heaters NANOTECHNOLOGY DOI https://iopscience.iop.org/article/10.1088/1361-6528/ab19c6 YÖKSİS SJR Q1 JCR Q2
2009 High responsivity A plane GaN based metal semiconductor metal photodetectors for polarization sensitive applications Applied Physics Letters DOI 10.1063/1.3143230 YÖKSİS SJR Q1 JCR Q1
2008 Improved quality nonpolar a plane GaN AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth SLEO PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE DOI 10.1002/pssa.200723403 YÖKSİS SJR Q1 JCR Q2
2008 Electrical characterization of low defect density nonpolar 11 20 a plane GaN grown with sidewall lateral epitaxial overgrowth SLEO Journal of Materials Research DOI 10.1557/JMR.2008.0069 YÖKSİS SJR Q1 JCR Q2
2007 Growth evolution in sidewall lateral epitaxial overgrowth SLEO Journal of Crystal Growth DOI 10.1016/j.jcrysgro.2007.05.027 YÖKSİS SJR Q1 JCR Q2
2007 Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE DOI 10.1002/pssa.200673539 YÖKSİS SJR Q1 JCR Q2
2006 Stability of 1 1 over bar 00 m plane GaN films grown by metalorganic chemical vapor deposition Japanese Journal of Applied Physics DOI 10.1143/JJAP.45.8644 YÖKSİS SJR Q1 JCR Q2
2006 Optical polarization anisotropy in strained A plane GaN films on R plane sapphire PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS DOI 10.1002/pssb.200565297 YÖKSİS SJR Q2 JCR Q3
2006 Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy Applied Physics Letters DOI 10.1063/1.2198086 YÖKSİS SJR Q1 JCR Q1
2006 Improved quality 1120 a plane GaN with sidewall lateral epitaxial overgrowth Applied Physics Letters DOI 10.1063/1.2172159 YÖKSİS SJR Q1 JCR Q1
2005 Intensity dependent time resolved photoluminescence studies of GaN AlGaN multiple quantum wells of varying well width on laterally overgrown a plane and planar c plane GaN PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE DOI 10.1002/pssa.200461599 YÖKSİS SJR Q1 JCR Q2
2005 Polarized photoreflectance spectroscopy of strained A plane GaN films on R plane sapphire Journal of Applied Physics DOI 10.1063/1.1968424 YÖKSİS SJR Q1 JCR Q1
2004 Growth of thick 1120 GaN using a metal interlayer Applied Physics Letters DOI 10.1063/1.1818736 YÖKSİS SJR Q1 JCR Q1
2004 Microstructural evolution of a plane GaN grown on a plane SiC by metalorganic chemical vapor deposition Applied Physics Letters DOI 10.1063/1.1650545 YÖKSİS SJR Q1 JCR Q1

Akademisyenlere dön