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AKİL BİRKAN SELÇUK

PROFESÖR

İZMİR BAKIRÇAY ÜNİVERSİTESİ MÜHENDİSLİK VE MİMARLIK FAKÜLTESİ BİYOMEDİKAL MÜHENDİSLİĞİ BÖLÜMÜ

  • Ana Dal Mühendislik Temel Alanı
  • Yan Dal Biyomedikal Mühendisliği

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 34
  • Proje 0
  • Kitap 4
  • Bildiri 54
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 9 Q2 15 Q3 4 Q4 0
WoS (JCR) Q1 3 Q2 13 Q3 10 Q4 2
TR Index 3 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 1
Ort. yüzdelik 53.8%
Üst %1 payı 0.0%
Üst %10 payı 3.4%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 34 yayın

Scopus (SJR)
Q1 9 Q2 15 Q3 4 Q4 0
WoS (JCR)
Q1 3 Q2 13 Q3 10 Q4 2
TR Index
3 makale

Makale listesi

  1. 2025 Optimizing artificial neural network parameters using Taguchi method:An application of artificial heart pump Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering DOI 10.1177/09544089251336834 YÖKSİS SJR Q2 JCR Q3 OpenAlex 61.3%
  2. 2021 Computer-Aided Simulation Using Finite Element Analysis of Protect Against to Coronavirus (COVID-19) of Custom-Made New Mask Design Transactions of the Indian Institute of Metals DOI 10.1007/s12666-021-02227-4 YÖKSİS SJR Q2 JCR Q3 OpenAlex 87.1%
  3. 2021 Güneş Pilleri Uygulamalarında Kullanılan Organik Tabanlı Schottky Diyotlarında İyonize Radyasyonun Aygıt Parametrelerine Etkisi Karadeniz Fen Bilimleri Dergisi DOI 10.31466/kfbd.904677 YÖKSİS TR Index OpenAlex 45.6%
  4. 2019 The effects of gamma irradiation on dielectric properties of Ag/Gd co-doped hydroxyapatites Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-019-01387-w YÖKSİS SJR Q2 JCR Q2 OpenAlex 48.9%
  5. 2018 An investigation of the electrical properties of PbO based MOS-type different Schottky barrier diodes on a structure AIP Conference Proceedings DOI 10.1063/1.5026014 YÖKSİS OpenAlex 3.7%
  6. 2018 Effect of Gamma-Ray Irradiation on the Electrical Characteristics of Al/C24H12/p-Si Nano-Structure Physica Scripta DOI 10.1088/1402-4896/aad2a7 YÖKSİS SJR Q3 JCR Q2 OpenAlex 82.0%
  7. 2015 Structural and dielectric properties of yttrium-substituted hydroxyapatites Material Science And Engineering C DOI 10.1016/j.msec.2014.11.039 YÖKSİS SJR Q1 JCR Q2 OpenAlex 79.2%
  8. 2015 Frequency dependent dielectric properties of PMMA deposited on p-type silicon Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2015.04.019 YÖKSİS SJR Q2 JCR Q1 OpenAlex 65.7%
  9. 2015 Electrical analysisofAl/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures:Comparisonstudy Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2015.04.030 YÖKSİS SJR Q2 JCR Q1 OpenAlex 84.6%
  10. 2015 Dielectric Properties of Al Poly methyl methacrylate PMMA p Si Structures at Temperatures Below 300 K Procedia - Social and Behavioral Sciences DOI 10.1016/j.sbspro.2015.06.295 YÖKSİS OpenAlex üst %10 OpenAlex 90.6%
  11. 2014 Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device Journal Of Electronic Materials DOI 10.1007/s11664-014-3267-2 YÖKSİS SJR Q1 JCR Q2 OpenAlex 82.5%
  12. 2014 Characterization of electrical properties of Al/maleic anhydride(MA)/p-Si structures by well-known methodsS Synthetic Metals DOI 10.1016/j.synthmet.2014.02.024 YÖKSİS SJR Q1 JCR Q2 OpenAlex 7.8%
  13. 2008 Investigation of diode parameters using I V and C V characteristics of In SiO2 p Si MIS Schottky diodes Physica B: Condensed Matter DOI 10.1016/j.physb.2008.01.039 YÖKSİS SJR Q2 JCR Q3 OpenAlex 74.4%
  14. 2008 High frequency characteristics of tin oxide thin films on Si Vacuum DOI 10.1016/j.vacuum.2008.02.002 YÖKSİS SJR Q2 JCR Q3 OpenAlex 54.9%
  15. 2008 Effects of gamma irradiation on dielectric characteristics of SnO2 thin films Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment DOI 10.1016/j.nima.2008.05.022 YÖKSİS SJR Q1 JCR Q2 OpenAlex 9.0%
  16. 2007 Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures Physica B DOI 10.1016/j.physb.2007.06.031 YÖKSİS SJR Q2 JCR Q3 OpenAlex 60.7%
  17. 2007 On the dielectric characteristics of Au/SnO2/n-Si capacitors Physica B DOI 10.1016/j.physb.2007.04.002 YÖKSİS SJR Q2 JCR Q3 OpenAlex 50.8%
  18. 2007 Effect of oxide thickness on the capacitance and conductancecharacteristics of MOS structures Physica B DOI 10.1016/j.physb.2007.07.004 YÖKSİS SJR Q2 JCR Q3 OpenAlex 53.0%
  19. 2007 On the interface trap density and series resistance of tin oxide film prepared on n-type Si (111) substrate: Frequency dependent effects before and after 60Co c-ray irradiation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms DOI 10.1016/j.nimb.2007.02.085 YÖKSİS SJR Q1 JCR Q2 OpenAlex 58.6%
  20. 2007 60Co g-ray irradiation effects on the capacitance and conductance characteristics of tin oxide films on Si Nuclear Instruments and Methods in Physics Research A DOI 10.1016/j.nima.2007.04.107 YÖKSİS SJR Q1 JCR Q1 OpenAlex 55.4%

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