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Akademisyen

KEMAL AKKILIÇ

PROFESÖR

DİCLE ÜNİVERSİTESİ ZİYA GÖKALP EĞİTİM FAKÜLTESİ MATEMATİK VE FEN BİLİMLERİ EĞİTİMİ BÖLÜMÜ

  • Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  • Yan Dal Fizik

Kayıtlı çıktılara kısa bakış — ayrıntılar aşağıda.

  • Makale 24
  • Proje 0
  • Kitap 1
  • Bildiri 13
  • Patent 0
  • Sanatsal 0
Scopus (SJR) Q1 9 Q2 13 Q3 0 Q4 1
WoS (JCR) Q1 5 Q2 11 Q3 6 Q4 0
TR Index 0 makale

Alan+yıl+tür normalize OpenAlex yüzdelik — Clarivate ESI / SciVal değildir.

Üst %1 makale 0
Üst %10 makale 2
Ort. yüzdelik 72.1%
Üst %1 payı 0.0%
Üst %10 payı 9.1%

Makaleler

YÖKSİS ve OpenAlex kaynak ayrımıyla makaleler; quartile ve TR Index ile daraltabilirsiniz.

Dizin filtreleri

Toplam 24 yayın

Scopus (SJR)
WoS (JCR)
TR Index
0 makale

Makale listesi

  1. 2021 Electrical properties of an Ag/ZnS/p\u2013Si heterojunction obtained by sputtered ZnS thin film Optical Materials DOI 10.1016/j.optmat.2021.111126 YÖKSİS SJR Q2 JCR Q2 OpenAlex 58.3%
  2. 2020 Characterization of synthesized new chitin derivativesand Schottky diodes made using these derivatives JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS YÖKSİS SJR Q2 JCR Q3
  3. 2020 Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-020-04530-0 YÖKSİS SJR Q2 JCR Q3 OpenAlex 61.9%
  4. 2018 K. Akkilic, M.E. Aydın, A. Türüt, “The effect of series resistance on the relationship between barrier heights and ideality factors of inhomogeneous Schottky barrier diodes Physica Scripta. 70 (2004) 364-367. Physica Scripta YÖKSİS
  5. 2017 The influence of substrate temperature on RF sputtered CdS thin films and CdS p Si heterojunctions Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2016.11.023 YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.0%
  6. 2017 The influence of substrate temperature on RF sputtered CdS thin films and CdS/p-Si heterojunctions MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING DOI 10.1016/j.mssp.2016.11.023 YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.0%
  7. 2017 The influence of substrate temperature on RF sputtered CdS thin films and CdS p Si heterojunctions Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2016.11.023 YÖKSİS SJR Q2 JCR Q2 OpenAlex 77.0%
  8. 2016 The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application Materials Research Bulletin DOI 10.1016/j.materresbull.2016.01.021 YÖKSİS SJR Q1 JCR Q2 OpenAlex 0.8%
  9. 2015 Electrical and photoelectrical behaviour of heterojunctions based on novel oligomeric metal complexes Applied Organometallic Chemistry DOI 10.1002/aoc.3371 YÖKSİS SJR Q2 JCR Q2 OpenAlex 58.2%
  10. 2015 Analysing Enhancement of Electricity Generating Capacity with Solar Tracking System of the Most Sunning Region of Turkey journal of Clean Energy technologies DOI 10.7763/JOCET YÖKSİS
  11. 2015 Electrical and Photoelectrical Properties of Copper II Complex n Si Au Heterojunction Diode American Journal of Optics and Photonics DOI 10.11648/j.ajop.20140206.11 YÖKSİS OpenAlex 72.7%
  12. 2013 Characterization of an Au n Si photovoltaic structure with an organic thin film Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2013.03.002 YÖKSİS SJR Q2 JCR Q2 OpenAlex 68.5%
  13. 2012 The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au ZnO Schottky Contacts on n Si Journal of Nano-And Electronic Physics YÖKSİS SJR Q4
  14. 2010 Calculation of current voltage characteristics of a Cu II complex n Si AuSb Schottky diode Current Applied Physics DOI 10.1016/j.cap.2009.06.019 YÖKSİS SJR Q2 JCR Q2 OpenAlex 68.5%
  15. 2009 Current voltage and capacitance voltage characteristics of a Sn Methylene Blue p Si Schottky diode Synthetic Metals DOI 10.1016/j.synthmet.2009.04.024 YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %10 OpenAlex 95.4%
  16. 2008 Effect of the binuclear Cu II complex interface layer on the calculation of electronic properties of Au Cu II complex n Si organic inorganic hybrid heterojunction Synthetic Metals DOI 10.1016/j.synthmet.2008.06.018 YÖKSİS SJR Q1 JCR Q1 OpenAlex 76.3%
  17. 2008 Electrical and photovoltaic properties of a n Si chitosan Ag photodiode Microelectronic Engineering DOI 10.1016/j.mee.2008.05.015 YÖKSİS SJR Q1 JCR Q2 OpenAlex 88.2%
  18. 2007 The calculation of electronic properties of an Ag chitosan n Si Schottky barrier diode Synthetic Metals DOI 10.1016/j.synthmet.2007.03.009 YÖKSİS SJR Q1 JCR Q1 OpenAlex 82.9%
  19. 2006 The calculation of electronic parameters of an Au carotene n Si Schottky barrier diode Physica B: Condensed Matter DOI 10.1016/j.physb.2005.12.254 YÖKSİS SJR Q2 JCR Q3 OpenAlex üst %10 OpenAlex 91.7%
  20. 2006 The calculation of electronic parameters of an Ag chitin n Si Schottky barrier diode Synthetic Metals DOI 10.1016/j.synthmet.2006.06.012 YÖKSİS SJR Q1 JCR Q1 OpenAlex 82.3%

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