Advanced Materials and Semiconductor Technologies

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• CEBRAİL GÜMÜŞ
• FATMA GÖDE

CdS films were prepared by chemical bath deposition (CBD) at 60 °C without stirring. The crystallographic structure of the films and the size of the crystallites in the films were studied by x-ray diffraction. The energy gap of the films was found to decrease by annealing. The best annealing temperature for CBD grown…

• HÜLYA METİN GÜBÜR

Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 × 10−4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is descr…

• FATİH AKYOL

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• DEMET İSKENDEROĞLU

Tin sulphide films have been deposited onto glass substrates at room temperature by chemical bath deposition using aqueous solution. The structural and vibrational properties of the deposited films have been characterized by X-ray diffraction (XRD), FT-IR and Raman spectroscopy. XRD data indicate that as grown film is…

• TÜLAY HURMA

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• KUTSAL BOZKURT
• NESLİHAN AYARCI KURUOĞLU
• ORHAN ÖZDEMİR

This work describes the theoretical and experimental investigation of an in-house produced 63Ni radioisotope-powered GaN-based direct conversion (betavoltaic) nuclear battery. GaN p-n junction device with 1-mm2 area was fabricated and irradiated by the 63Ni plate source. Short-circuit current and open-circuit voltage…

• EROL KAM

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• MEHMET ARI

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• MEHMET ARI
• SELMA ERAT

We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-reso…

• FAHRETTİN SARCAN

We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-reso…

• ÖMER DÖNMEZ

We report the observation of thermal annealing- and nitrogen-induced effects on electronic transport properties of as-grown and annealed n- and p-type modulation-doped Ga1 - xInxNyAs1 - y (x = 0.32, y = 0, 0.009, and 0.012) strained quantum well (QW) structures using magnetotransport measurements. Strong and well-reso…

• AYŞE EROL