Makale detayı · 2016 · article
Thermal annealing effects on optical and structural properties of GaBiAs epilayers Origin of the thermal annealing induced redshift in GaBiAs
ISSN0925-8388
YÖKSİS
OpenAlex
Yıl2016
Atıf17OpenAlex
Atıf15Semantic Scholar
Yüzdelik%73,1
FWCI0,851,00 = dünya ortalaması
Scopus (SJR)Q1
WoS (JCR)Q1
Veri kaynağı ayrımı
- YÖKSİSYÖKSİS makale kaydı
- YÖKSİS dergi adıJournal of Alloys and Compounds
- Katalog eşleşmesi (ISSN)Journal of Alloys and Compounds
- OpenAlexOpenAlex zenginleştirmesi (özet, atıf, konular)
- Semantic Scholaratıf sayısı (OpenAlex ile birleştirilmez)
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17atıfOpenAlex · cited_by_count (önbellek / veritabanı)
Yerel katalogda bu makaleye atıf yapan 29 yayın (OpenAlex referans eşleşmesi; tam dünya listesi değildir).
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- 2020 Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobilityAtıf 18 · OpenAlex
- 2020 Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobilityAtıf 18 · OpenAlex
- 2020 Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobilityAtıf 18 · OpenAlex
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