Dielectric Characterization of Al/PAN/n˗Si/Al Structure as a Function of Frequency and Voltage

OpenAlex İngilizce

In this study, the voltage and frequency dependencies of dielectric properties of Al/Polyacrylonitrile (PAN)/n˗Si/Al metal/polymer/semiconductor (MPS) were analyzed. To determine the dielectric characteristics, capacitance˗voltage ( C – V ) and conductance˗voltage ( G – V ) of Al/PAN/n˗Si/Al were measured depending on the frequency and bias voltage ranges in 10 kHz–1 MHz and ±5 V at room temperature. Using the C – V and G – V measurements, dielectric parameters; ε′ , ε″ , and tan δ , M′ and M″ , were evaluated depending on voltage and frequency. As the frequency increased, ε′ and ε″ decreased, while peaks related to the relaxation mechanism were observed in M″ and tan δ . The ε′ values at 10 kHz and 1 MHz are 15.2 and 4.58 for 1 V, respectively. Relaxation times were calculated using the peaks in the M″ ˗ f plot and it was seen that the relaxation time decreased as the bias voltage increased. Relaxation mechanism is related to non˗Debye relaxation in PAN/n–Si structure. The existence of relaxation peaks in M″ curves showed that the studied material is an ionic conductor.