The investigation of main electrical parameters, energy dependent profiles of surface states and their lifetimes in the Au/n-Si Schottky diodes with (PVA-Fe3O4) interlayer depend on frequency and voltage

OpenAlex İngilizce

Abstract In this article, the impedance-voltage-frequency (Z-V-f) measurements of the fabricated Au/(PVA-Fe3O4)/n-Si SDs have been performed between 0.1 kHz and 1 MHz, and in the ±3 V range. Main important electronic parameters of the Schottky diode (SD) like diffusion - potential (VD), Fermi - energy (EF), barrier - height (ΦB), depletion layer (WD), and max. electric field (Em) were extracted from the reverse bias 1/C2 - V plots in a wide frequency range. The voltage-reliant variations of the surface states (Nss) have been calculated by using low—high frequency capacitance (CLF-CHF), and parallel conductance or admittance models and compared to each other. The voltage-reliant resistance profile of Ri has also been obtained from the Nicollian & Brews method for all frequencies. All these results indicate that these main electrical parameters are strongly dependent on voltage and frequency due to the existence of Nss, their lifetimes (τ), interfacial organic layer, Rs, interface, and dipole polarizations. But, while Nss is effective, both in depletion and inversion regions, Rs is dominant at the strong-accumulation region at high enough frequency.