Makale detayı · 2008 · article
The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition
Veri kaynağı ayrımı
- YÖKSİSYÖKSİS makale kaydı
- YÖKSİS dergi adıApplied Physics Letters
- Katalog eşleşmesi (ISSN)Applied Physics Letters
- OpenAlexOpenAlex zenginleştirmesi (özet, atıf, konular)
- Semantic Scholaratıf sayısı (OpenAlex ile birleştirilmez)
Özet
The influence of substrate polarity on the properties of InN layers grown by high-pressure chemical vapor deposition has been studied. The 2Θ-ω x-ray diffraction scans on InN layers deposited on polar GaN epilayers revealed single-phase InN(0002) with a full width at half maximum (FWHM) of around 200arcsec. InN layers grown on N-polar GaN exhibit larger FWHMs. Rocking curve analysis confirmed single-phase InN for both growth polarities, with FWHM values for ω-RC(002) at 2080arcsec for InN grown on Ga-polar templates. The A1(LO) Raman mode analysis shows higher free carrier concentrations in InN grown on N-polar templates, indicating that polarity affects the incorporation of impurities.
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Yerel katalogda bu makaleye atıf yapan 3 yayın (OpenAlex referans eşleşmesi; tam dünya listesi değildir).
- 2017 title Influence of N sub2/sub /H sub2/sub and N sub2/sub plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition/titleAtıf 18 · OpenAlex
- 2012 Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition grown InN thin filmAtıf 14 · OpenAlex
- 2010 Optical properties of InN grown on templates with controlled surface polaritiesAtıf 8 · OpenAlex