Makale detayı · 2016 · article
Graphene oxide as a p-dopant and an anti-reflection coating layer in graphene/silicon solar cells
Veri kaynağı ayrımı
- YÖKSİSYÖKSİS makale kaydı
- YÖKSİS dergi adıNanoscale
- Katalog eşleşmesi (ISSN)Nanoscale
- OpenAlexOpenAlex zenginleştirmesi (özet, atıf, konular)
- Semantic Scholaratıf sayısı (OpenAlex ile birleştirilmez)
Özet
It is shown that coating graphene-silicon (Gr/Si) Schottky junction based solar cells with graphene oxide (GO) improves the power conversion efficiency (PCE) of the cells, while demonstrating unprecedented device stability. The PCE has been shown to be increased to 10.6% (at incident radiation of 100 mW cm(-2)) for the Gr/Si solar cell with an optimal GO coating thickness compared to 3.6% for a bare/uncoated Gr/Si solar cell. The p-doping of graphene by the GO, which also serves as an antireflection coating (ARC) has been shown to be a main contributing factor to the enhanced PCE. A simple spin coating process has been used to apply GO with thickness commensurate with an anti-refection coating (ARC) and indicates the suitability of the developed methodology for large-scale solar cell assembly.
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