Makale detayı · 2021
Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties
Dergi
Journal of Materials Science Materials in Electronics
OpenAlex
Atıf 18
Yüzdelik 78.5%
FWCI 1.28
- Yıl
- 2021
- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS dergi adı Journal of Materials Science Materials in Electronics
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
Özet henüz derlenmedi; DergiPark / OpenAlex kuyruğu işlenince burada görünecek.
Konular
Atıflar
OpenAlex cited_by_count. WoS veya Scopus atıf sayısı değildir; o kaynaklar için ayrı kolon yoktur.
18 atıf
OpenAlex cited_by_count (önbellek / veritabanı)
Yerel katalogda bu makaleye atıf yapan 23 yayın (OpenAlex referans eşleşmesi; tam dünya listesi değildir).
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- Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I\u2013V characteristics in Au/Ti/Al2O3/n-GaAs structures 2021
- Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I\u2013V characteristics in Au/Ti/Al2O3/n-GaAs structures 2021
- Electrical and optical characterization of Al/MgO/p-Si (MIS) diode with magnesium oxide thin films by spraying method 2025
- Electrical and optical characterization of Al/MgO/p-Si (MIS) diode with magnesium oxide thin films by spraying method 2025
- Bias voltage effect on impedance, modulus and dielectric spectroscopies of HfO 2 -interlayered Si-based Schottky diodes at room temperature 2021
- Design and detailed electrical characterization of MoO3 supported Au/n-Si junction diodes 2025
- Design and detailed electrical characterization of MoO3 supported Au/n-Si junction diodes 2025