Makale detayı · 2020
Structural properties of cadmium selenide nanowires prepared by chemical bath deposition for the electrical and photosensitive characteristics of the p-Si/CdSe heterojunction
Journal of Photonics for Energy
- Yıl
- 2020
- ISSN
1947-7988- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
Cadmium selenide (n-CdSe) thin films were grown on a silicon substrate with a polished surface and applied to the Schottky type device structure. The n-CdSe thin films produced depended on various deposition times at 70°C by the use of the chemical bath deposition technique. XRD results show that the fabricated thin films consist of both cubic and hexagonal crystal systems. The morphology of CdSe was formed in nanograins and nanowire structures with respect to deposition times of 6 and 10 h, respectively. In addition to structural analysis of CdSe thin films, CdSe nanowires were used as an interfacial layer in a metal–semiconductor device to investigate its effects on the electrical and photosensitive characteristics of the device. As well as under forward bias current–voltage (I − V) conditions, the space charge limited current conduction behaviors were identified at low voltages. The results showed that the film produced at 10 h has a better performance compared to that produced at 6 h in terms of increased electric current.
Konular
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
Birincil konu Chalcogenide Semiconductor Thin Films