The Role of Self-Assembly Monolayers (SAM) on Schottky Diode Performance

İngilizce (OpenAlex)

This study investigates the electrical and charge transport properties of Schottky diodes with a p-Si/TiO2/SAM/Al structure, incorporating the self-assembly monolayers (SAMs) 4", 4""-[biphenyl-4,4" diylbis(phenylimino)]dibiphenyl-4-carboxylic acid (MZ187) onto a titanium dioxide (TiO2) layer synthesized via the sol-gel method. The impact of the MZ187 molecule on diode performance was evaluated based on parameters such as the barrier height (∅b), ideality factor (n), and series resistance (Rs). Experimental results reveal that the MZ187 monolayers on TiO2 substantially enhanced diode performance, reducing the n from 3.7 for the control diode to 2.7 for the MZ187-modified diode. The Rs was also significantly reduced, while the ∅b increased. The rectification ratio increased from 1.3x102 for the control diode to 2.2x103 for the MZ187 modified diode. These improvements are attributed to the ability of MZ187 molecules to minimize interface states (Nss) and improve surface quality. These findings underscore the critical role of SAMs in optimizing Schottky diode performance and demonstrate how the MZ187 molecule enhances diode efficiency by altering interface properties. The effectiveness of SAM coatings in enhancing Schottky diode performance makes a significant contribution to the field of nanoelectronics. This research paves the way for future studies on the use of SAMs in various nano electronic applications and offers promising potential for improving the performance and reliability of these technologies.