Makale detayı · 2008 · article
Air stable solution processable n channel and ambipolar semiconductorsfor thin film transistors based on theindenofluorenebis dicyanovinylene core
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- YÖKSİSYÖKSİS makale kaydı
- YÖKSİS dergi adıJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Katalog eşleşmesi (ISSN)Journal of the American Chemical Society
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Özet
We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (0 to +5 V), and high on/off ratios of 10(7)-10(8). These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution
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