Makale detayı · 2002
Solar blind AlGaN based Schottky photodiodes with low noise and high detectivity
- Yıl
- 2002
- ISSN
0003-6951- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n−/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274 nm was achieved with AlxGa1−xN (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8 nA/cm2 dark current density in the 0–25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cm Hz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 kHz.
Konular
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
Birincil konu GaN-based semiconductor devices and materials