Makale detayı · 2005
Solar blind AlxGa1 xN based avalanche photodiodes
YÖKSİS
OpenAlex
Açık erişim · green
SJR Q1
JCR Q1
Atıf 30
Yüzdelik 88.2%
FWCI 2.57
- Yıl
- 2005
- ISSN
0003-6951- Tür
- article
Veri kaynağı ayrımı
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Özet
İngilizce (OpenAlex)
We report the Metalorganic Chemical Vapor Deposition (MOCVD) growth, fabrication, and characterization of solar blind AlxGa1−xN∕GaN-based avalanche photodiodes. The photocurrent voltage characteristics indicate a reproducible avalanche gain higher than 25 at a 72 V applied reverse bias. Under a 25 V reverse bias voltage, the 100 μm diameter devices had a maximum quantum efficiency of 55% and a peak responsivity of 0.11A∕W at 254 nm, and a NEP of 1.89x10−16 W∕Hz1∕2.
Konular
- GaN-based semiconductor devices and materials
- Advanced Optical Sensing Technologies
- Electrostatic Discharge in Electronics
Birincil konu GaN-based semiconductor devices and materials