Makale detayı · 2005
Fabrication and characterisation of solar blind Al0 6Ga0 4N MSM photodetectors
YÖKSİS
OpenAlex
Açık erişim · green
SJR Q1
JCR Q2
Atıf 11
Yüzdelik 60.5%
FWCI 0.52
- Yıl
- 2005
- ISSN
0013-5194- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
Solar-blind metal–semiconductor–metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current–voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.
Konular
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
Birincil konu GaN-based semiconductor devices and materials