Makale detayı · 2006
Dual color ultraviolet metal semiconductor metal AlGaN photodetectors
- Yıl
- 2006
- ISSN
0003-6951- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single AlxGa1−xN heterostructure. This was accomplished by the incorporation of an epitaxial filter layer and the recess etching of the surface. The 11nm full width at half maximum (FWHM) responsivity peak of the detector that was fabricated on the as-grown surface was 0.12A∕W at 310nm with 10V bias, whereas the 22nm FWHM responsivity peak of the detector fabricated on the recess-etched surface was 0.1A∕W at 254nm with 25V bias. Both detectors exhibited excellent dark current characteristics with less than 10fA leakage current.
Konular
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Photocathodes and Microchannel Plates
Birincil konu GaN-based semiconductor devices and materials