Makale detayı · 2025
Charge and thermal transport properties of undoped and doped ternary dichalcogenides Tl(InX2) with a reduced dimensionality: perfect candidates for thermoelectric applications in the mid-temperature region
Journal of Physics D: Applied Physics
- Yıl
- 2025
- ISSN
0022-3727- Tür
- article
Veri kaynağı ayrımı
- YÖKSİS YÖKSİS makale kaydı
- OpenAlex OpenAlex zenginleştirmesi (özet, atıf, konular)
Özet
İngilizce (OpenAlex)
Abstract The present work focuses on a comprehensive investigation of charge and thermal transport properties of thallium–indium-based ternary dichalcogenides with a common chemical formula of T l + ( I n 3 + X 2 2 − ) − where X denotes tellurium, selenium or sulfur atoms. Two compounds in the one-dimensional chain form, including pristine TlInSe 2 and Fe-doped TlInTe 2 as well as a hybrid material constructed from the two-dimensional TlInS 2 layered semiconductor diluted with TlFeS 2 at % 0.7, have been successfully grown using the Bridgman–Stockbarger technique. X-ray powder diffraction, scanning electron microscopy and energy-dispersive x-ray spectroscopy measurements were performed to characterize the local structure and chemical composition features of all prepared compounds. A strong anisotropy in the charge-carrier transport properties of the samples was observed from dc - and ac - electrical conductivity measurements made in directions parallel and perpendicular to the layers/chains. This is a fundamental property for realizing high thermoelectric performance in semiconducting materials. As a result, extremely large Seebeck coefficients were revealed upon experimental investigations of the thermoelectric properties of T l + ( I n 3 + X 2 2 − ) − samples over a wide temperature range between ∼100 K and ∼800 K. The first-principles density functional theory (DFT) and Boltzmann transport equations were employed to investigate the thermal transport properties of the compounds studied at the atomic scale. A specific interaction between the thallium cation and the sulfur anion was observed in the DFT computation scheme. The developed interaction (more electrostatic than a much weaker van der Waals one) enhances the charge carrier effective mass via flattening of the electronic bands near the band edges and this can give a new path towards Seebeck coefficient enhancement in the traditional mid-temperature range.
Konular
- 2D Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Thermoelectric Materials and Devices
Birincil konu 2D Materials and Applications