EFFECT OF BORIC ACID CONCENTRATIONS ON THE CHARACTERIZATION OF THE In2O3 THIN FILMS GROWTH BY SPRAYING PYROLYSIS METHOD

OpenAlex İngilizce

Indium oxide thin films with undoped and boron doped were produced by spray pyrolysis method at a substrate temperature of 380 °C on the glass substrate using boric acid (H3BO3) as the dopant source. The effects of doping concentration on the features of undoped and boron doped In2O3 thin films have been investigated. The XRD analyses indicate that all thin films are polycrystalline with cubic structure, which is the dominant peaks of the (222), (400), (440) and (622) reflection planes with lattice parameter, approximately 9-10 Å. As the boron enters the structure, a decrease in band gap energy occurs. This decrease continues up to 0.03 M of boron additives and tends to increase again above this value. As the boron concentration increases up to 0.03 M, the resistance value decreases and the carrier concentration and Hall mobility values increase, which caused by the scattering of carriers that are severely weakened due to increased crystal quality.